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. 2013 May 21;7(4):263–274. doi: 10.4161/chan.25056

graphic file with name chan-7-263-g1.jpg

Figure 1. Gating characteristics of hNav1.5-CW mutant channels in stably transfected HEK293 cells. (A) A family of superimposed Na+ current traces was evoked by 80-ms pulses to voltages ranging from −100 to +50 mV in 10-mV increments. The inward current evoked by a pulse to −70 mV and the outward currents evoked by pulses to 0 and +50 mV are labeled. (B) Conductance was calculated by an equation, gm = INa/(Em−ENa), where INa is the peak current, Em is the test voltage and ENa is the estimated reversal potential. Normalized gm values were then plotted against the corresponding voltage (open circles). The plot was fitted with a Boltzmann function. The midpoint voltage (V0.5) and slope (k) of the function were −41.8 ± 1.4 mV and 10.2 ± 0.6 mV, respectively (n = 8). The holding potential was set at −140 mV.