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. 2014 Jan 30;306(8):G711–G727. doi: 10.1152/ajpgi.00449.2013

Table A3.

Gating variable parameters

Variable Vh, mV K, mV a τx, s Reference
dCaT
    H(NaV,NSV,CaV), L(NaV) −26 −6 1 0.006 10
    H(NSCa) −40 −3 1 0.006
    L(NSCa) −45 −3 1 0.003
fCaT
    H(NaV,NSV,CaV), L(NaV) −66 6 1 0.04 10
    H(NSCa), L(NSCa) −55 5 1 0.1
dNaV
    H(NaV) −25 −5.6 1 Eq. 40 3*
    L(NaV) −39 −5.6 1 Eq. 46 3
fNaV
    L(NaV) −55 −4.5 0.53 1.0
dNSV
    H(NSV) −30 −5 1 0.005
fNSV
    H(NSV) −50 5 0.3 0.8
dCaV
    H(CaV) −26 −6 1 0.006 10
dKt
    L(NaV) −20 −4.6 1.0 0.003
fKt
    L(NaV) −45 4.4 1.0 0.045
dKERG
    L(NaV) −35 −7.1 1.0 Eq. 49
fKERG
    L(NaV) −42 4 1.0 0.003

Parameters for voltage-dependent gating variables for x = a/[1 + e(VmVh/k)] + (1 − a) and for τx, where x = dCaT, fCaT, dNaV, fNaV, dCaV, dNSV, fNSV, dKt, fKt, dKERG, or fKERG. Model variations in which each parameter value is used are denoted by H for High-Cl and L for Low-Cl. References are given where available; other parameter values were chosen to reproduce correct slow wave activity; see text for other definitions.

*

Vh modified from values in Ref. 3.