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. 2014 Apr 23;4:4755. doi: 10.1038/srep04755

Figure 1.

Figure 1

(a) A schematic illustration of the iron oxide memristor device and cross-section view of a real device conducted in transmission electron microscopy (TEM). (b) Current-voltage (I-V) curves of memristor under multiple triangle-shapes DC sweeps. A bipolar behavior and continuous distribution of resistance states are demonstrated.