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. 2014 Apr 10;7:1–29. doi: 10.2147/NSA.S40324

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© 2014 Peng et al. This work is published by Dove Medical Press Limited, and licensed under Creative Commons Attribution – Non Commercial (unported, v3.0) License

The full terms of the License are available at http://creativecommons.org/licenses/by-nc/3.0/. Non-commercial uses of the work are permitted without any further permission from Dove Medical Press Limited, provided the work is properly attributed.

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Transfer characteristics of graphane and graphone.

Notes: Transfer characteristics for graphane and graphone in (A) linear and (B) logarithmic scale. (C) Quantum capacitance as a function of charge density in the channel. (D) Output characteristic for different V_GS. Reprinted with permission from Fiori G, Lebegue S, Betti A, et al. Simulation of hydrogenated graphene field-effect transistors through a multiscale approach. Phys Rev B. 2010;82:153404.⁹³ http://dx.doi.org/10.1103/PhysRevB.82.153404. Copyright © 2010 by The American Physical Society.

Abbreviations: NMOS, n-type metal oxide semiconductor; PMOS, p-type metal oxide semiconductor; V_GS, gate to source voltage; V_DS, drain to source voltage; V_on, voltage corresponding to the current initially turned on.