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. 2014 Apr 10;7:1–29. doi: 10.2147/NSA.S40324

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© 2014 Peng et al. This work is published by Dove Medical Press Limited, and licensed under Creative Commons Attribution – Non Commercial (unported, v3.0) License

The full terms of the License are available at http://creativecommons.org/licenses/by-nc/3.0/. Non-commercial uses of the work are permitted without any further permission from Dove Medical Press Limited, provided the work is properly attributed.

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Color map of I_on/I_off ratios and injection velocity for graphane and graphone devices as a function of t_OX1.

Note: Reprinted with permission from Fiori G, Lebegue S, Betti A, et al. Simulation of hydrogenated graphene field-effect transistors through a multiscale approach. Phys Rev B. 2010;82:153404.⁹³ http://dx.doi.org/10.1103/PhysRevB.82.153404. Copyright © 2010 by The American Physical Society.

Abbreviations: NMOS, n-type metal oxide semiconductor; PMOS, p-type metal oxide semiconductor; t_OX1, top gate oxide thicknesses; I_on/I_off, ratio of the on and off currents; V_inj, injection velocity.