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. Author manuscript; available in PMC: 2014 Aug 15.
Published in final edited form as: Nano Lett. 2013 Aug 2;13(8):3684–3689. doi: 10.1021/nl401574c

Figure 3.

Figure 3

Characterization of YSi2 wire network devices. (a) AFM image illustrating one example of a YSi2 network device (wire 15) (scale bar: 370 nm). (b) Temperature dependence of the corrected zero bias resistance (see text) of two YSi2 network devices, wire 14 (Supporting Information) and wire 15. The solid lines represent linear fits. (c), (d), (e) I – V characteristics of a network device (wire 15) at the indicated temperatures. The solid lines represent fits to the data using eq 2.