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. 2014 May 6;4:4716. doi: 10.1038/srep04716

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Dynamic behavior of defects in an ultrafine grain of tungsten under continuous 2 keV He⁺ ion irradiation at 950°C (Video S1 available online in supplementary material): (a), (b) and (c) dislocation loop shuttling between two pinning defects (circled by solid white line) from a fluence of 2.8 × 10¹⁹ to 3.2 × 10¹⁹ ions.m⁻² (further example is shown in Figure 7); (d) and (e) dislocation migration and coalescence (circled by dashed white line) during irradiation from 3.2 × 10¹⁹ to 3.6 × 10¹⁹ ions.m⁻²; and (f) a uniform distribution of dislocations with some decorated by bubbles at the end fluence of 3.6 × 10¹⁹ ions.m⁻².