Figure 5.

Absorbance in different parts of the perfect absorber (a) operating in the neighborhood of Point 2, (b) when the strip thickness in the absorber increases to t_s = 60 nm, (c) when both the strip and the ground plate have t_s = t_g = 60 nm thickness, and (d) t_s = t_g = 135 nm thickness. All the other parameters are kept fixed and the same as in Table 1. Absorbance in different parts of the absorber with the parameters same as in (d) except for (e) , (f) , and (g) . The total absorbance in plain In_0.54Ga_0.46N layer of the same thickness (i.e., d = 12 nm) is also shown for comparison.