Figure 2.

Combinatorial development cycle for all-oxide PV. High throughput fabrication is performed using the following: spray pyrolysis, pulsed laser deposition, and RF sputtering. For high throughput characterization, (a) thickness measurements with scanning profilometer, optical analysis, and combined focused ion beam (FIB) cross sections analyzed under scanning electron microscopy (SEM). (b) For optical measurements, scanning UV–vis–NIR spectroscopy of total transmission, total reflection, and specular reflection. (c) For device performance, scanning current–voltage measurements under solar simulation. (d) For composition: Raman mapping combined with bandgap analysis. Data analysis: (a) algorithms for current–voltage curves analysis to derive photovoltaic parameters, (b) absorptance calculations, (c) semiautomatic bandgap fitting using thickness and absorptance, and (d) internal quantum efficiency calculations based on absorptance and current–voltage analysis.