Table 1.

Stochastic synapse model and parameters. (S) for single-synapse model; (M) for memory model calculations, where different

(a) Presynaptic components
Synapse	Determinant of release probability, $P_{\mathrm{rel}}(t)$
Static	$P_{\mathrm{rel}}(t)=p_0$
Facilitating	$P_{\mathrm{rel}}(t)=p_{0}F(t)$, where between spikes: ${\tau }_F\frac{dF}{dt}=(1-F)$ and immediately following each spike: $F^{+}=F^{-}+f_F(\frac{1}{p_0}-F^{-})$
Depressing	$P_{\mathrm{rel}}(t)=p_{0}V$, where P(V = 1)=D(t); P(V = 0)=1 − D(t). Between spikes: ${\tau }_D\frac{dD}{dt}=(1-D)$ and immediately following successful release, $D^{+}=0$, while immediately following unsuccessful release, $D^{+}=D^{-}$

(b) Postsynaptic components
Synapse	Determinant of synaptic gating variable, s(t)
All	Following successful release: $s^{+}=s^{-}+\tilde{\alpha }(1-s^{-})$
	Between successful releases: ${\tau }_s\frac{ds}{dt}=-s$

(c) Parameters
Synapse	Presynaptic τ	$p_0$	Factors	Postsynaptic ${\tau }_s$	$\tilde{\alpha }$
Static	–	0.5 (S)	–	100 ms	1 − exp(−0.25)
		0.5 (M)
Facilitating	${\tau }_F=500\mathrm{ms}$	0.1 (S)	$f_F=0.5$ (S)	100 ms	1 − exp(−0.25)
		0.25 (M)	$f_F=0.25$ (M)
Depressing	${\tau }_D=250\mathrm{ms}$	0.5	–	100 ms	1 − exp(−0.25)