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. 2013 Dec 6;3:19. doi: 10.1186/2190-8567-3-19

Table 2.

Details of network simulations producing memory activity

(a) Model summary
Populations
Single population, E
Connectivity
All-to-all
Neuron model
Leaky integrate-and-fire (LIF) with refractory period
Synapse model
Excitatory AMPA + voltage-dependent NMDA, inhibitory GABA conductances − step increase then exponential decay
Input
Independent fixed-rate Poisson spike trains from populations of Input cells
Measurements State transitions times via mean population firing rate
(b) Populations
Name Elements Size
E LIF neurons N = 8,20,30,40 (static) N = 4,8,12,16 (facilitating)
(c) Connectivity
Name Source Target Pattern
EE E E All-to-all, weight W
(d) Neuron and synapse model
Name
LIF neuron
Type
Leaky integrate-and-fire (LIF) with refractory period, and noisy Poisson exponential conductance input
Subthreshold dynamics
CmdVdt=gL(VVL)+gEE(t)(VVE)+gAMPA(t)(VVE)+gGABA(t)(VVI)
EE synaptic conductance dynamics
gEE(t)=gEEmaxcells,isi(t)
τsdsidt=si(t) between spikes of cell i at times ti and si(ti+)=si(ti)+α˜[1si(ti)]
Spiking If V(t)>Vth then
(1) emit spike with time-stamp t
(2) V(t)Vreset
(f) Input
Type Description
Poisson generators X = AMPA,GABA τXdsXdt=sX(t)+δ(ttX)
P(ttX<t+dt)=υXdt; υAMPA=υGABA=800 Hz
(g) Measurements
Transition times Time for si,EE to transition from below 0.05 to above 0.45 (Tdown) and from above 0.45 to below 0.05 (Tup)
(h) LIF neuron parameters
VL VE VI Vth Vreset gL gEEmax Cm gAMPAmax gGABAmax τAMPA τGABA
−70 mV −70 mV −70 mV −45 mV −60 mV 50 nS 30nSN 0.5 nF 20 nS 20 nS 2 ms 5 ms
(i) Synaptic parameters (EE)
Synapse Presynaptic τ p0 Factors Postsynaptic τs α˜
Static

0.5 (M)

100 ms
1 − exp(−0.25)
Facilitating τF=500ms 0.25 (M) fF=0.25 (M) 100 ms 1 − exp(−0.25)