Figure 2.
TEM images of SiNWs from moderately doped silicon wafer under various concentration of H2O2. (A) is the root of SiNWs prepared under etchant with 0 mol/L H2O2; the inset is the top of SiNWs. (B) is prepared under etchant with 0.03 mol/L H2O2; the inset shows the SAED pattern.