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. 2014 Jun;143(6):761–782. doi: 10.1085/jgp.201411166

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© 2014 Keceli and Kubo

This article is distributed under the terms of an Attribution–Noncommercial–Share Alike–No Mirror Sites license for the first six months after the publication date (see http://www.rupress.org/terms). After six months it is available under a Creative Commons License (Attribution–Noncommercial–Share Alike 3.0 Unported license, as described at http://creativecommons.org/licenses/by-nc-sa/3.0/).

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Figure 9. — Voltage- and [ATP]-dependent gating does not change depending on the location of one T339S relative to D315A in the trimer; trans (D315A–T339S–WT) and cis (WT–D315A&T339S–WT) showed similar voltage- and [ATP]-dependent gating. (A and B) Normalized voltage-induced activation traces of trans (A) and cis constructs (B) at various [ATP] from the representative traces shown in Fig. S11. (C and D) Dependence of the activation kinetics on voltage and [ATP] for trans (C) and cis (D) constructs. Mean (± SEM) activation time constants for trans (C; n = 12–16) and cis (D; n = 9–14) constructs at various [ATP] and membrane potentials are shown. (E and F) Mean (± SEM) normalized G-V relationships at various [ATP] for trans (C; n = 7–14) and cis (D; n = 6–10) constructs derived from the maximum tail current responses by fitting with the two-state Boltzmann equation, as described in Materials and methods. (G and H) Mean (± SEM) V_1/2 (mV) (G) and Z (H) values for the trans (C; n = 7–14) and cis (D; n = 6–10) constructs.