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. 2014 Jun 5;5:4007. doi: 10.1038/ncomms5007

Figure 4. Device modeling of a GNW photodetector.

Figure 4

Comparison of the experimental (a) and modelled (b) I–V curves of photodetectors made of an individual single crystal ZnO NW and a GNW. (c) and (d) are modelled conduction band energy profiles of a single crystalline NW device and a GNW device under dark condition, respectively. And (e) and (f) are the corresponding modelled results under 100 μW cm−2 UV illumination, respectively.