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. 2014 Jun 2;5:3990. doi: 10.1038/ncomms4990

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(a) Correlation between the magnitude of resistive switching and the interface layer thickness. (b) Effect of a negative trapped charge Q_T on a Pt/Nb:SrTiO₃ junction. Top: charge density (ρ) distribution profile with and without Q_T. Middle: electric field (E) profile with and without Q_T. Bottom: band profile. The Schottky barrier is increased by a negative Q_T. (c) Correlation between the zero-bias depletion width and the interface layer thickness.