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. 2014 Jun 13;9(1):301. doi: 10.1186/1556-276X-9-301

Table 1.

Thickness evolution of the thin films obtained by ISS process

Fabrication process Thickness (nm) LSPR (λ max ; A max )
[PAH(9.0)/PAA(9.0)]40
 288 ± 5
 -
[PAH(9.0)/PAA(9.0)]40 + 1 L/R cycle
 291 ± 4
 421.3 nm; 0.04
[PAH(9.0)/PAA(9.0)]40 + 2 L/R cycles
 289 ± 16
 422.1 nm; 0.09
[PAH(9.0)/PAA(9.0)]40 + 3 L/R cycles
 296 ± 8
 422.8 nm; 0.79
[PAH(9.0)/PAA(9.0)]40 + 4 L/R cycles 294 ± 8 424.6 nm; 1.07

Thickness evolution of the ISS films and the location of the LSPR absorption bands (λmax) with their maxima absorbance values (Amax).