Skip to main content
. 2014 Jun 13;9(1):301. doi: 10.1186/1556-276X-9-301

Table 2.

Thickness evolution of the thin films obtained by ISS process after thermal treatment

Fabrication process Temperature Thickness (nm) LSPR (λ max ; A max )
[PAH(9.0)/PAA(9.0)]40+ 4 L/R cycle
 Ambient
 294 ± 8
 424.6 nm; 1.07
[PAH(9.0)/PAA(9.0)]40+ 4 L/R cycles
 50°C
 277 ± 9
 424.6 nm; 1.10
[PAH(9.0)/PAA(9.0)]40+ 4 L/R cycles
 100°C
 256 ± 7
 424.6 nm; 1.16
[PAH(9.0)/PAA(9.0)]40+ 4 L/R cycles
 150°C
 212 ± 7
 436.8 nm; 1.63
[PAH(9.0)/PAA(9.0)]40+ 4 L/R cycles 200°C 194 ± 7 477.1 nm; 1.57

Thickness evolution of the ISS thin films and the location of the LSPR absorption bands (λmax) with their maxima absorbance values (Amax) as a function of the temperature.