Table 4.
Thickness evolution of the thin films obtained LbL-E deposition technique after thermal treatment
| Fabrication process | Temperature | Thickness (nm) | LSPR (λmax; Amax) |
|---|---|---|---|
| [PAH(9.0)/PAA-AgNPs(9.0)]40 |
Ambient |
642 ± 12 |
432.6 nm; 1.18 |
| [PAH(9.0)/PAA-AgNPs(9.0)]40 |
50°C |
611 ± 16 |
432.6 nm; 1.20 |
| [PAH(9.0)/PAA-AgNPs(9.0)]40 |
100°C |
600 ± 12 |
432.6 nm; 1.26 |
| [PAH(9.0)/PAA-AgNPs(9.0)]40 |
150°C |
552 ± 9 |
432.6 nm; 1.68 |
| [PAH(9.0)/PAA-AgNPs(9.0)]40 | 200°C | 452 ± 10 | 446.9 nm; 1.66 |
Thickness evolution of the LbL-E thin films and the location of the LSPR absorption bands (λmax) with their maxima absorbance values (Amax) as a function of the temperature.