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. 2014 Jun 10;9(1):292. doi: 10.1186/1556-276X-9-292

Figure 2.

Figure 2

Current-voltage and resistance-voltage switching characteristics with different device sizes. Current-voltage and corresponding resistance-voltage characteristics of the W/TaOx/TiN memory devices with different device sizes of (a) 4 × 4 and (b) 0.6 × 0.6 μm2. The memory device performs 100 consecutive cycles of self-compliance bipolar resistive switching under a small operating voltage of ±2.5 V. Repeatable switching cycles are observed. The voltage-sweeping directions are shown by arrows 1 to 4.