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. 2014 Jun 10;9(1):292. doi: 10.1186/1556-276X-9-292

Figure 6.

Figure 6

Endurance characteristics. (a) P/E endurance of >103 cycles and (b) long read pulse endurance of >106 cycles of our novel W/TaOx/TiN memory device. The device size is 4 × 4 μm2.