Figure 3. Influence of growth conditions on monolayer GaSe crystals.
Optical micrographs of 2D monolayer GaSe crystals synthesized at a growth temperature of (a–c) ~710–720°C, (d–f) ~700–710°C, and (g–i) ~660–670°C, with an argon gas flow rate of 50 sccm and a growth time of 5 min. The images were obtained near the downstream side (a, d, g), middle (b, e, h), and upstream side (c, f, i) of the substrates. Insets of (d) and (g) are AFM images of individual crystals.