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. 2014 Jun 30;4:5497. doi: 10.1038/srep05497

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(a) Illustration of a 2D GaSe-based device illuminated with white light. (b) Optical image of a 2D GaSe device with patterned electrodes. The red arrows indicate the two electrodes used for measurements. (c) I_ds-V_ds characteristics of the 2D GaSe device in the dark (black curve) and with white light illumination (power density: 1.2 mW/cm²) (red curve). (d) The transfer characteristics of the 2D GaSe FET with V_ds = −10 V in the dark (black curve) and with white light illumination (red curve). Calculated responsivity as function of the V_g also shown (blue curve).