A. Overnight cultures grown in YPD media were diluted 1:200 in YPD (yeast conditions) or YPD + 10% FBS (hyphae conditions) and placed for 3 h at either 30°C (yeast) or 37°C (hyphae). Both transposon and deletion mutants for VSP52 and ARP2 do not form hyphae under these conditions. Heterozgygous mutants and revertants behaved like WT. An arp2Δ/Δarp3Δ/Δ double knockout showed identical behaviour compared with the arp2Δ/Δ single knockout. Bar = 10 μm.
B. Quantifying polarized morphogenesis. Hyphal induction was done as described for (A). While > 96% of WT, heterozygous and revertant strains formed true hyphae, the majority of vps52Δ/Δ, arp2Δ/Δ and arp2Δ/Δarp3Δ/Δ mutants did not form hyphae and grew as pseudohyphae instead. n > 200 for each strain.