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. Author manuscript; available in PMC: 2014 Jul 14.
Published in final edited form as: J Microelectromech Syst. 2013 Jun 5;22(6):1327–1338. doi: 10.1109/JMEMS.2013.2259615

Fig. 5.

Fig. 5

Etching steps performed after CMOS chip fabrication to reduce distance between beads and Hall sensors. (a) Chip is fabricated with a metal hard mask defining the sensor region. (b) RIE etch is used to remove ILD over the sensor region. (c) Exposed metal layer over sensor surface is removed with a wet etch.