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. 2014 Jul 30;4:5882. doi: 10.1038/srep05882

Figure 4. Characterization of the memory device.

Figure 4

Photographs of (A) flexible GO/g-C3N4-NSs/GO film on a PET substrate, and (B) the memory devices fabricated by laser irradiation with configuration of rGO/g-C3N4-NSs/rGO. Scale bars: B and C, 2 cm. (C) AFM image of the surface of g-C3N4-NSs film coated on GO film. (D) Cross-section SEM image of the rGO/g-C3N4-NSs/rGO sandwich structure.