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. 2014 Jul 30;4:5882. doi: 10.1038/srep05882

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(A) Typical I-V curve of a rGO/g-C₃N₄-NS/rGO device with arrows showing the voltage sweep direction. (B) The ON/OFF ratios of flexible memory diodes reported previously with nonmetal electrodes and insulator layer (Metal-free), metal electrode and nonmetal insulator layer (Metal electrode), metal-containing electrodes and insulator layer (Metal-based) compared with that of rGO/g-C₃N₄-NSs/rGO in current work. Inset: the pie chart of the percentage for each kind of flexible and rewritable memory diodes. This figure is derived from Table S1 in Supporting Information.