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. 2014 Aug 4;4:5931. doi: 10.1038/srep05931

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(a) The film resistance change induced by symmetric and asymmetric bipolar electric field sweeping at room temperature. The arrows indicate the directions of electric field sweeping. With the application of an asymmetric bipolar electric field, two stable film resistance states ‘A' and ‘B' can be realized. The inset is the schematics of 109°, 71° and 180° polarization switching induced by applying a negative voltage on a positively poled PMN-PT(011) substrate. (b) The film resistance as a function of temperature under two different poled states, where the polarization points to the out-of-plane direction (left inset) and stays in the (011) plane (right inset). These two strain states ‘A' and ‘B' correspond to the two remanant resitivity states.