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. 2014 Aug 4;4:5931. doi: 10.1038/srep05931

Figure 4.

Figure 4

(a) The film resistance change induced by asymmetric bipolar electric fields at different temperatures. The largest voltage induced resistance change was observed in 338 K, which corresponds to the phase transition temperature of the VOx thin film. (b) The first derivative of the hysteretic resistance with respect to electric field, as a function of electric field at different temperatures.