Figure - PMC

Skip to main content

An official website of the United States government

Here's how you know

Here's how you know

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

View full-text article in PMC

. 2014 Jul 31;5:4506. doi: 10.1038/ncomms5506

Search in PMC
Search in PubMed
View in NLM Catalog
Add to search

Copyright © 2014, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/

PMC Copyright notice

Left: example experimental data from epitaxial shell growth. Right: summary chart of charge carrier localization regimes from 24 experiments of homoepitaxial shell growth (‘core growth’) and core etching (‘core degradation’) of CdSe and CdTe, as well as shell growth experiments for type-I eh/o materials (CdSe/ZnS, CdSe/CdS, CdS/ZnS), type-I o/eh materials (CdS/CdSe), type-II h/e materials (CdTe/CdSe) and type-II e/h materials (CdSe/ZnTe, CdS/ZnSe). The diagonal dashed line indicates a region for zero net change in combined band edge oscillator strength. Error bars are s.d.