Fig. 5.
Effect of ApB on inward Igp generated by DI–DIV voltage-sensor mutants. (A) Typical inward hNav 1.5 Igp current traces before and after 100 nM ApB treatment. Cells were held at –100 mV and pretreated with 1 μM TTX. Currents before (left) and after (right) toxin treatment were elicited by the protocol as described in the Fig. 3 legend. The dotted line across current traces represents the zero current level. No linear leak and capacitance currents were subtracted. (B) Effect of ApB on the I–V curves of inward Igp. In all I–V curves, the subtraction of linear leak currents has been performed before (filled circles) and after (open circles) application of 100 nM ApB. Igp were normalized to the maximal control Igp. (C) Effect of ApB on the activation threshold of Igp fluxing through four voltage-sensors, respectively. N.S., no significance; *P < 0.05; #P < 0.01.