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. 2014 Aug;86(2):159–167. doi: 10.1124/mol.114.092338

Fig. 7.

Fig. 7.

Effect of ProTx-II on inward Igp generated by DI–DIV voltage-sensor mutants. Cells were held at –100 mV and pretreated with 1 μM TTX. Currents before (left) and after (right) 1 μM ProTx-II treatment were elicited by 100-ms hyperpolarizing steps to various potentials that ranged from –200 mV to +40 mV in a 10-mV increment. (A–D) Effects of ProTx-II on the I–V curves of inward Igp for the DI–DIV voltage-sensors, respectively. In all I–V curves, the subtraction of linear leak currents has been performed before (filled circles) and after (open circles) application of 1 μM ProTx-II. Igp were normalized to the maximal control Igp. (E) Effect of ProTx-II on the activation threshold of Igp fluxing through four voltage-sensors, respectively. N.S., no significance; *P < 0.05; #P < 0.01.