Figure 1.

Proposed 3D cross-point architecture by using Cu pillar. Schematic view of proposed three-dimensional cross-point architecture with copper (Cu) pillar for high-density memory application. It is expected that five layers of cross-point RRAM devices will be connected by using Cu pillar through Al₂O₃ isolation layer because Cu could be migrated through Al₂O₃ film under external positive bias on the TE. This is the general theory from conductive bridging resistive random access memory (CBRAM) devices.