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. 2014 Jul 26;9(1):366. doi: 10.1186/1556-276X-9-366

Figure 5.

Figure 5

I-V characteristics and conduction mechanism. (a) Bipolar resistive switching characteristics of the Al/Cu/Al2O3/TiN memory device at a CC of 500 μA under small operating voltage of ±1 V is observed. (b) To identify the current conduction mechanism, I-V curves are fitted in log-log scale. Both HRS and LRS show ohmic current conduction behavior.