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. 2014 Jul 26;9(1):366. doi: 10.1186/1556-276X-9-366

Figure 7.

Figure 7

Data retention and read endurance characteristics. (a) Typical data retention characteristics of our Al/Cu/Al2O3/TiN CBRAM device. The thickness of Al2O3 layer is 10 nm. (b) Read endurance characteristics of the Cu pillars in a Al/Cu/Al2O3/TiN structure at high CC of 70 mA. The stronger Cu pillars are obtained when the bias is positive.