Skip to main content
. 2014 Aug 27;9(1):433. doi: 10.1186/1556-276X-9-433

Figure 1.

Figure 1

A schematic of the conventional AlGaN/GaN HEMT. For structure A, a 10-nm-thick EBL with p-type polarity (p = 1 × 1018 cm−2) was inserted. For structure B and structure C, the original 10-nm-thick GaN EBL was replaced with Al0.1Ga0.9N EBL and Al0.1Ga0.9N/GaN/Al0.1Ga0.9N QW EBL, respectively.