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. 2014 Aug 27;9(1):433. doi: 10.1186/1556-276X-9-433

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Copyright © 2014 Lee et al.; licensee Springer.

This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.

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Breakdown voltage versus GaN thickness and dependence of aluminum composition on breakdown voltage. (a) HEMT's breakdown voltage versus the GaN thickness of QW EBL, where the barrier layer of QW EBL is Al_0.1Ga_0.9N and the total thickness of QW EBL is set to 10 nm. (b) Dependence of aluminum composition of QW EBL on the HEMT's breakdown voltage, where the GaN thickness of QW EBL is set to 6 nm and the total thickness of QW EBL is again fixed to 10 nm.