Table 1.
Comparison of radiation effects between published literature and this work
|
References |
Device structure |
Total dose |
Resistance |
Operation voltage |
||||
|---|---|---|---|---|---|---|---|---|
| Initial | Low | High | Forming | Set | Reset | |||
| [11] |
Cu/HfO2:Cu/Pt |
360 krad (Si) |
NA |
√ |
↓ |
√ |
↑ |
√ |
| [13] |
Pt/TiO2/Pt |
14 Mrad (Si) |
NA |
√ |
√ |
NA |
NA |
NA |
| [15] |
TiN/TaO
x
/Pt |
180 krad (Si) |
↑ |
√ |
↓ |
NA |
NA |
NA |
| This work | Ag/AlO x /Pt | 1 Mrad (Si) | ↓ | √ | ↓ | ↑ | √ | √ |
NA, not available; √, no or negligible change; ↑, increase; ↓, decrease.