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. 2014 Sep 8;9(1):474. doi: 10.1186/1556-276X-9-474

Figure 2.

Figure 2

Static characteristics of the studied devices. (a) Transfer characteristics of the SGFET and MISFET. The gate leakage current in the MISFET was less than that in the SGHFET. (b) Off-state I-V curve of both HFETs. (c) Measured current density divided by the electric field versus the square root of the electric field for the SGHFET. The electric field was extracted from the simulation model.