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. 2014 Aug 14;5:1268–1284. doi: 10.3762/bjnano.5.141

Figure 1.

Figure 1

Sketch of a piece of semiconducting material, placed between a hot source (heater, temperature TH) and a cold source (heat sink, temperature TC). A potential difference V is established between the extremities, due to the charge carrier flux driven by the temperature gradient.