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. 2014 Sep 8;87(1042):20140311. doi: 10.1259/bjr.20140311

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© 2014 The Authors. Published by the British Institute of Radiology

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Figure 4. — The dose linearity (a), dose rate dependency (b), depth dose dependency (c) and angular dependency (d) of both micro (MIC) and standard (STD) metal oxide semiconductor field effect transistors (MOSFET) dosemeter are shown. The percent depth doses (PDDs) acquired with MOSFET dosemeter were compared with the PDDs acquired with parallel-plate chamber. The measured values with MOSFET dosemeter at various gantry angles were compared with the measured value at the gantry angle of 0°. IC, ion chamber; MU, monitor unit.