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. 2014 Sep 2;111(39):14042–14046. doi: 10.1073/pnas.1415464111

Fig. 5.

Fig. 5.

AFM images of uncapped active layers: (A) QW sample showing atomic terraces of the top surface of the InGaN QW, (B) fQW, (C) QD+fQW (A) and (D) QD+fQW (B). Scale bar, 500 nm in width, with a vertical scale of 6 nm. The white dots in C and D are indium droplets which form InGaN QDs during growth of the GaN capping layer. The dark patches in B, C, and D are bare GaN.