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. 2014 Oct 10;4:6570. doi: 10.1038/srep06570

Figure 3.

Figure 3

(a) Device architecture of the conventional PSC utilized in this study; J-V characteristics of PBDTTT-EFT based PSC devices employing ultrathin HAPAN with different thickness under (b) 100 mW/cm2 AM 1.5G illumination and (c) in the dark; (d) The corresponding EQE curves of the PBDTTT-EFT based PSC devices employing ultrathin HAPAN with different thickness.