Table 1. Properties of a-Si:H thin-film used as photodetector.

Tauc optical bandgap, Eopt	1.7 eV
Intrinsic conductivity at RT, σdi	10–10 S cm–1
Activation energy of σdi	0.9 eV
Photoconductivity (G = 1021 cm–3s–1)	10–4 S cm–1
Electron drift mobility, µe	1 (cm2V–1s–1)
Hole drift mobility, µh	10–3 (cm2V–1s–1)
Electron lifetime, τ	10–7 s
n-doped conductivity at RT, σdn	10–3 S cm–1
p-doped conductivity at RT, σdp	10–5 S cm–1