Figure 5.
Course of clearance with its single clearance phases computed for average SWCNT (dae =10 nm) and average MWCNT (dae =100 nm): (A) clearance following particle deposition after sitting breathing; (B) clearance following particle deposition after light-work breathing. SWCNT, single-walled carbon nanotubes; MWCNT, multi-walled carbon nanotubes.