Figure 3.

a) Plot of the estimated writing times per gold nanoarray area for each of the four different methods using an e-beam current of 10 nA and a pitch of 100 nm. Black points correspond to measured values. The writing time for DOTF technique with 100 nA is plotted for discussion. Inset: Equivalent writing time per dot for the four techniques. (b) Time per dot plotted as a function of the e-beam current for the four methods: ≈40 µs for the conventional method (limiting factor is the main field deflection) and ≈8 µs for the advanced conventional method (limiting factor is the pattern generator overhead). There is almost no overhead with DOTF and “sequence” methods, so the time is linear with the exposure time (inversely proportional to the current).