Copyright © 2014, Macmillan Publishers Limited. All rights reserved
This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/4.0/
and valence band maximum, VBM 
from thick Ge film, (b) As 3d 
core level and VBM 
from thick AlAs film, (c) As 3d, Ge 3d core levels from ~1.5 nm Ge/AlAs interface, and (d) energy-band alignment of the Ge/AlAs heterointerface, respectively.