. 2014 Nov 7;4:6954. doi: 10.1038/srep06954

Table 1. Summary of the Hall data taken from a batch of B-γ-CsSnI₃ samples.

Thickness (nm)	Mobility (cm²V⁻¹s⁻¹)	Carrier Density (10¹⁹cm⁻³)	Conduction Type
150	2.66 ± 0.66	4.10 ± 0.27	p
300	4.78 ± 0.59	4.17 ± 0.17	P
600	19.59 ± 4.05	3.05 ± 0.53	p

Table 1. Summary of the Hall data taken from a batch of B-γ-CsSnI3 samples.