A, posterior view of isolated parabasisphenoid, BP/1/6232w. B, ventral view of centre and left side of central portion of braincase of BP/1/7342 showing proximal end of left paroccipital process and view into ceiling of middle ear region (compare with G. prima as figured by Gower & Sennikov ([54]: fig. 3). Abbreviations: a.hvc, anterior opening of horizontal (external) semicircular canal; amve, anteromedial wall of vestibule; aur, auricular recess; avc, opening of anterior semicircular canal; b.exp, break through dorsal end of exoccipital pillar; bf, bparabasisphenoid fossa; bpt, basipterygoid process; btbs, basal tuber of parabasisphenoid; b.unos, base of unossified gap ( = pseudolagenar recess); b.vrop, break through dorsal end of ventral ramus of opisthotic; dbmf, dorsal border of metotic foramen; dbfo, dorsal border of fenestra ovalis; ecc, ceiling of endocranial cavity; f.bbf, floor of basioccipital-parabasisphenoid fossa; ica, foramen for cerebral branch of internal carotid artery; itp, intertuberal plate; l.ve, ceiling of left vestibule; p.hvc, posterior opening of horizontal (external) semicircular canal; pmve, posteromedial wall of vestibule; popr, paroccipital process; PR, prootic; pvc, opening of posterior vertical semicircular canal; r.ve, ceiling of right vestibule; s.bo, surface for articulation with basioccipital; s.btbo, surface for articulation with basal tuber of basioccipital; sg, stapedial groove.