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Parameters of the fabricated transistors: conduction type, extracted room-temperature mobility μ300K, activation energy Ea, width of the semiconductors DOS T0 and Urbach energy Eu
| Semiconductor/Dielectric | Conduction | μ300K (cm2 V-1s-1) | Ea (meV) | T0 (K) | Eu (meV) |
|---|---|---|---|---|---|
| PSeDPPDTT/PMMA | p-type | 0.09 | 135 | 445 | 39 |
| N2200/PMMA | n-type | 0.15 | 98 | 366 | 32 |
| P3HT/PMMA | p-type | 0.07 | 123 | 585 | 50 |
| PBTTT/PMMA | p-type | 0.06 | 162 | 670 | 58 |
| PTAA/CYTOP | p-type | 0.003 | 183 | 453 | 39 |
