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. Author manuscript; available in PMC: 2014 Nov 18.
Published in final edited form as: J Mater Chem. 2012 Jan 28;22(4):1498–1503. doi: 10.1039/C1JM14272K

Fig. 5.

Fig. 5

Representative room-temperature (a) IdsVds curves measured at various gate voltages (VBG = −60, −40, −20, 0, 20, 40, 60 V); (b) IdsVBG curve measured at Vds = 0.1 V for the back-gated FET devices. Inset in (a) shows an optical image of the device; the scale bar is 20 µm. (c) A histogram of the carrier mobility distribution of the graphene prepared with the different synthetic processes.